K9F1G08U0M NandFlash存储器芯片用户手册

K9F1G08U0M NandFlash存储器

使用该芯片的有：

MYD-LPC1788 工控板/开发板

MYS-SAM9G45 工控主板/单板机

FEATURES
· Voltage Supply
-1.8V device(K9F1GXXQ0M): 1.70V~1.95V
-3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V
· Organization
- Memory Cell Array
-X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit
-X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit
- Data Register
-X8 device(K9F1G08X0M): (2K + 64)bit x8bit
-X16 device(K9F1G16X0M): (1K + 32)bit x16bit
- Cache Register
-X8 device(K9F1G08X0M): (2K + 64)bit x8bit
-X16 device(K9F1G16X0M): (1K + 32)bit x16bit
· Automatic Program and Erase
- Page Program
-X8 device(K9F1G08X0M): (2K + 64)Byte
-X16 device(K9F1G16X0M): (1K + 32)Word
- Block Erase
-X8 device(K9F1G08X0M): (128K + 4K)Byte
-X16 device(K9F1G16X0M): (64K + 2K)Word
· Page Read Operation
- Page Size
- X8 device(K9F1G08X0M): 2K-Byte
- X16 device(K9F1G16X0M) : 1K-Word
- Random Read : 25ms(Max.)
- Serial Access : 50ns(Min.)
· Fast Write Cycle Time
- Program time : 300ms(Typ.)
- Block Erase Time : 2ms(Typ.)
· Command/Address/Data Multiplexed I/O Port
· Hardware Data Protection
- Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
· Command Register Operation
· Cache Program Operation for High Performance Program
· Power-On Auto-Read Operation
· Intelligent Copy-Back Operation
· Unique ID for Copyright Protection
· Package :
- K9F1GXXX0M-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1G08U0M-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F1GXXX0M-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F1G08U0M-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F1G08U0M-V,F(WSOPI ) is the same device as
K9F1G08U0M-Y,P(TSOP1) except package type.